J. Holst

1 ta ish

Technische Universität Berlin

1. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

   J. Holst, M. Straßburg, N. N. Ledentsov +13

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000219