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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

V. V. EmtsevRussian Academy of SciencesV. Yu. DavydovI. N. GoncharukEvgenia V. KalininaIoffe Physicotechnical Institute RASVitalii V. KozlovskiSt. Petersburg State Polytechnical UniversityD. S. PoloskinRussian Academy of SciencesA. V. SakharovN. M. ShmidtRussian Academy of SciencesA. N. SmirnovNational University of Science and Technology MISiSA. S. UsikovRussian Academy of Sciences
Materials science forumbook series1997en
ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

GaN-based semiconductor devices and materialsSemiconductor materials and interfacesAdvancements in Semiconductor Devices and Circuit Design

Identifikatorlar

DOI
10.4028/www.scientific.net/msf.258-263.1143

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Koʻrsatkichlar — AkademScholar · Tez orada