Maqola

Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

Yu. V. ZhilyaevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. E. KompanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. V. KonenkovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. S. MokeevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. D. RaevskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1998en

ABI

Annotatsiya

Results are presented of the photoluminescence of n-GaN (T=300 K) after chemical treatment of the surface using solutions of inorganic sulfides (Na2S and (NH4)2S) in water or isopropanol. It is shown that the maximum intensity of the photoluminescence spectrum of n-GaN increases after chemical treatment of the surface using alcohol solutions of sulfides and this increase is greater for solutions of the strong-base sulfide Na2S compared with the weak-base sulfide (NH4)2S.

Mavzular

GaN-based semiconductor devices and materials Ga2O3 and related materials Photocathodes and Microchannel Plates

Identifikatorlar

DOI: 10.1134/1.1262343

Iqtiboslar va manbalar

0 ta iqtibos9 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada