С. И. Степанов

3 ta ish

Argonne National Laboratory

1. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000048

2. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

   С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000248

3. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000163