Abror Abdaminov

4 ta ish

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek District, 100214 Tashkent, Uzbekistan

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   MaqolaSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20254 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20251 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.002520

3. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   PreprintGaN-based semiconductor devices and materialsSSRN Electronic Journal20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.preprint.000087

4. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   MaqolaRadiation Effects in ElectronicsPhysica Scripta20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.017583