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High-temperature diode formed by epitaxial GaP layers

M. M. SobolevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. Г. НикитинA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1998en

ABI

Annotatsiya

The preparation of pure, undoped, high-temperature GaP grown by liquid-phase epitaxy is reported. Results are presented of studies of GaP p-n structures grown at various crystallization initiation temperatures, using the capacitance-voltage (C-V) method and deep-level transient spectroscopy (DLTS). The characteristics of GaP are determined by the low concentration of background impurities and deep-level defects. Measurements of the temperature dependence of the forward branch of the current-voltage characteristic showed that the thermometric characteristic of the diode is linear between −191 and ∼+600 °C.

Mavzular

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces GaN-based semiconductor devices and materials

Identifikatorlar

DOI: 10.1134/1.1262110

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