GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
A. Yu. EgorovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. E. ZhukovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. R. KovshA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. M. UstinovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. MamutinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgС. В. ИвановA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. Н. ЖмерикA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. F. Tsatsul’nikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,D. A. BedarevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
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Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 μm radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells.
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