Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API

GaN-based semiconductor devices and materials

71 ta ish

  1. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

    A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos
    ABI

  2. Annealing Effect on Passivated Deep Levels in GaN Epilayers

    Sh. U. Yuldashev, Tae Won Kang, Woon Hyung Jung +6

    MaqolaGaN-based semiconductor devices and materialsJapanese Journal of Applied Physics20000 iqtibos
    ABI

  3. Growth of SiC and GaN on Porous Buffer Layers

    M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos
    ABI

  4. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

    N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos
    ABI

  5. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

    Michael E. Mastro, O. Kryliouk, Todd Dann +4

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20020 iqtibos
    ABI

  6. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  7. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos
    ABI

  8. hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction

    A. V. Karimov, Physics-Sun"

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20050 iqtibos
    ABI

  9. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

    A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20060 iqtibos
    ABI

  10. Quenching Photoconductivity and Photoelectric Memory in 6H-SiC

    M. Duisenbaev

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos
    ABI

  11. Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials

    T. E. Slobodyan, K. A. Bulashevich, S. Yu. Karpov

    MaqolaGaN-based semiconductor devices and materialsSemiconductors20080 iqtibos
    ABI

  12. In‐situ doping and implantation of GaN layers with Mn

    Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

    MaqolaGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20090 iqtibos
    ABI

  13. The quantum solution of the accumulation layer problem of n-InN

    A. A. Klochikhin, I. Yu. Strashkova

    MaqolaGaN-based semiconductor devices and materialsSemiconductors20090 iqtibos
    ABI

  14. Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

    Jiandong Wei, S. F. Li, A. É. Atamuratov +2

    MaqolaForce Microscopy Techniques and ApplicationsApplied Physics Letters20100 iqtibos
    ABI

  15. The influence of concentrated solar radiation on the properties of Ga0.7In0.3P/GaP photoconverters

    M. A. Abdukadyrov, I. O. Dzhumaniyazov, Р. А. Муминов

    Maqolasolar cell performance optimizationApplied Solar Energy20110 iqtibos
    ABI

  16. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

    Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10

    MaqolaGaN-based semiconductor devices and materialsApplied Physics Letters20130 iqtibos
    ABI

  17. Long-channel field-effect transistor with short-channel transistor properties

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20140 iqtibos
    ABI

  18. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

    M. Maryško, J. Hejtmánek, V. V. Laguta +9

    MaqolaZnO doping and propertiesJournal of Applied Physics20150 iqtibos
    ABI

  19. Influence of the radius of the quantum dot and the nonquilibrium degree on the conversion efficiency of light emitting diodes

    Х. Б. Ашуров, M. M. Adilov, С. Е. Максимов +1

    MaqolaSemiconductor Quantum Structures and DevicesNanosystems Physics Chemistry Mathematics20150 iqtibos
    ABI

  20. Recombination Processes in 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Baptiste Bérenguier, E. B. Yakimov +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20160 iqtibos
    ABI

  21. Properties of tandem-junction heterophotoconverters with GaAs p–n junctions under exposure by bilaterally concentrated sunlight

    M. A. Abdukadyrov, A. S. Ganiev, Р. А. Муминов +1

    Maqolasolar cell performance optimizationApplied Solar Energy20160 iqtibos
    ABI

  22. ZnO Nanostructured Wires for Gas Sensing Applications

    Amir Abidov, Sevara Abdukarimova, Umida Ziyamukhamedova +3

    MaqolaGas Sensing Nanomaterials and SensorsECS Meeting Abstracts20160 iqtibos
    ABI

  23. On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation

    Timur Saliev, S. L. Lutpullaev, A. Kutlimuratov

    MaqolaGaN-based semiconductor devices and materialsApplied Solar Energy20160 iqtibos
    ABI

  24. Features of the Formation of Ohmic Contacts to n+-InN

    Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

    MaqolaGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos
    ABI

  25. Размерное квантование в n-GaP

    B.P. Расулов, Р.Я. Расулов, И.М. Эшболтаев +1

    MaqolaGaN-based semiconductor devices and materialsФизика и техника полупроводников20200 iqtibos
    ABI