Maqola

Long-channel field-effect transistor with short-channel transistor properties

A. V. KarimovPhysical-Technical Institute, Scientific Production Association “Physics-Sun”, Uzbekistan Academy of Sciences, ul. G. Mavlyanov 2b, Tashkent, 100084, UzbekistanD. M. YodgorovaPhysical-Technical Institute, Scientific Production Association “Physics-Sun”, Uzbekistan Academy of Sciences, ul. G. Mavlyanov 2b, Tashkent, 100084, UzbekistanO. A. AbdulkhaevPhysical-Technical Institute, Scientific Production Association “Physics-Sun”, Uzbekistan Academy of Sciences, ul. G. Mavlyanov 2b, Tashkent, 100084, Uzbekistan

Semiconductorsjournal2014en

ABI

Annotatsiya

The typical parameters of samples of long-channel field-effect transistors and the results of measurement of their functional characteristics are presented. The possible distributions of the carrier mobility over the channel thickness are considered. The current-voltage characteristics of long-channel field-effect transistors with an arbitrary doping profile and carrier-mobility gradient are theoretically analyzed taking into account carrier velocity saturation.

Mavzular

Semiconductor Quantum Structures and Devices Advancements in Semiconductor Devices and Circuit Design GaN-based semiconductor devices and materials

Identifikatorlar

DOI: 10.1134/s1063782614040137

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