Maqola

Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

M. MaryškoInstitute of Physics of ASCR v.v.i 1 ., Cukrovarnická 10, 162 00 Prague 6, Czech RepublicJ. HejtmánekInstitute of Physics of ASCR v.v.i 1 ., Cukrovarnická 10, 162 00 Prague 6, Czech RepublicV. V. LagutaInstitute of Physics of ASCR v.v.i 1 ., Cukrovarnická 10, 162 00 Prague 6, Czech RepublicZdeněk SoferInstitute of Chemical Technology 2 Department of Inorganic Chemistry, , 166 28 Prague 6, Czech RepublicDavid SedmidubskýInstitute of Chemical Technology 2 Department of Inorganic Chemistry, , 166 28 Prague 6, Czech RepublicPetr ŠimekInstitute of Chemical Technology 2 Department of Inorganic Chemistry, , 166 28 Prague 6, Czech RepublicMartin VeselýInstitute of Chemical Technology 2 Department of Inorganic Chemistry, , 166 28 Prague 6, Czech RepublicM. MikulicsJARA, Fundamentals of Future Information Technology 8 , D52425 Jülich, GermanyCh. BuchalPeter Grünberg Institut 3 , PGI-9, Forschung Centrum, Jülich D-52425, GermanyAnna MackováJ.E.Purkinje University 5 Department of Physics, Faculty of Science, , České mládeže, 400 96 Ústí nad Labem, Czech RepublicPetr MalinskýJ.E.Purkinje University 5 Department of Physics, Faculty of Science, , České mládeže, 400 96 Ústí nad Labem, Czech RepublicR. WilhelmInstitute of Ion Beam Physics and Materials Research 6 Helmholtz-Zentrum Dresden-Rossendorf, , Dresden, Germany

Journal of Applied Physicsjournal2015en

ABI

Annotatsiya

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

Mavzular

ZnO doping and properties GaN-based semiconductor devices and materials Metal and Thin Film Mechanics

Identifikatorlar

DOI: 10.1063/1.4916761

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