Maqola

On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation

Timur SalievScientific and Production Association Physics of the Sun, Tashkent, UzbekistanS. L. LutpullaevScientific and Production Association Physics of the Sun, Tashkent, UzbekistanA. KutlimuratovScientific and Production Association Physics of the Sun, Tashkent, Uzbekistan

Applied Solar Energyjournal2016en

ABI

Annotatsiya

The voltage-current characteristics and electroluminescence of a light-emitting-diode (LED) n/(3C-SiC)–p/ CDIAMOND heterostructure with white glow without phosphor created on the basis of diamond film grown by the CVD method on n/(3C-SiC) substrates with a doped level of (5–8) × 1017 cm–3 are considered It is shown the possibility to improve the characteristics of created LED structures by their irradiation with a flux of high-energy (5 MeV) electrons of a certain dose and heat treatment.

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Mavzular

GaN-based semiconductor devices and materials Silicon Nanostructures and Photoluminescence Photocathodes and Microchannel Plates

Identifikatorlar

DOI: 10.3103/s0003701x16020158

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