A.V. Gavrilin

2 ta ish

Ioffe Physicotechnical Institute RAS

1. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000200

2. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000320