Pavlo Sai

1 ta ish

Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine, Center for Terahertz Research and Applications (CENTERA), Institute of High Pressure Physics of the PAS

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   MaqolaGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.001077