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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

Casey M. SchwarzDepartment of Physics, University of Central Florida 1 , Orlando, Florida 32816, USAAnupama YadavDepartment of Physics, University of Central Florida 1 , Orlando, Florida 32816, USAM. ShatkhinDepartment of Physics, University of Central Florida 1 , Orlando, Florida 32816, USAElena FlitsiyanDepartment of Physics, University of Central Florida 1 , Orlando, Florida 32816, USALeonid ChernyakDepartment of Physics, University of Central Florida 1 , Orlando, Florida 32816, USAV. KasiyanDepartment of Materials Engineering, Ben-Gurion University of the Negev 2 , Beer-Sheva 84105, IsraelLu LiuDepartment of Chemical Engineering, University of Florida 3 , Gainesville, Florida 32611, USAYuyin XiDepartment of Chemical Engineering, University of Florida 3 , Gainesville, Florida 32611, USAF. RenDepartment of Chemical Engineering, University of Florida 3 , Gainesville, Florida 32611, USAS. J. PeartonDepartment of Materials Science and Engineering, University of Florida, Gainesville 4 , Florida 32611, USAC. F. LoKopin Corporation, Taunton 5 , Massachusetts 02780, USAJ. W. JohnsonKopin Corporation, Taunton 5 , Massachusetts 02780, USAE. DanilovaInstitute of Nuclear Physics 6 , Tashkent 100214, Uzbekistan

Applied Physics Lettersjournal2013en

ABI

Annotatsiya

AlGaN/GaN high electron mobility transistors were irradiated with 60Co gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics.

Mavzular

GaN-based semiconductor devices and materials Ga2O3 and related materials Semiconductor materials and devices

Identifikatorlar

DOI: 10.1063/1.4792240

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