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Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

N.I. KuznetsovIoffe Physicotechnical Institute RASA. E. NikolaevIoffe Physicotechnical Institute RASYu. MelnikIoffe Physicotechnical Institute RASIrina P. NikitinaNewcastle University

Materials science forumbook series2000en

ABI

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GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials

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DOI: 10.4028/www.scientific.net/msf.338-342.1655

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