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Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials

T. E. SlobodyanIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 194021K. A. BulashevichIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 194021S. Yu. Karpov

Semiconductorsjournal2008en

ABI

Annotatsiya

In the first part of our study, scalar wave equations for the guided TE and TM modes in laser heterostructures based on nitrides of Group III elements are derived taking into account the anisotropy of optical properties of these nitrides. The available experimental data on optical properties of multicomponent nitrides (and also sapphire and silicon carbide used typically as substrates in growing the nitride heterostructures) are analyzed. Based on this analysis, approximations of spectral dependences of permittivities for ordinary and extraordinary waves for these materials are suggested.

Mavzular

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Photonic and Optical Devices

Identifikatorlar

DOI: 10.1134/s1063782608070154

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