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Oʻzbek

A. Yu. Leyderman

11 ta ish

Starodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  2. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20108 iqtibos
    ABI

  3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  4. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    А. С. Саидов, A. Yu. Leyderman, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsTechnical Physics Letters20164 iqtibos
    ABI

  5. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos
    ABI

  6. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace

    А. С. Саидов, A. Yu. Leyderman, Sh. T. Manshurov

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20102 iqtibos
    ABI

  7. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
    ABI

  8. Determining certain physical settings of photocells

    A. Yu. Leyderman

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20110 iqtibos
    ABI

  9. Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

    A. Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev

    MaqolaSilicon and Solar Cell TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20200 iqtibos
    ABI

  10. Sarlavhasiz

    A.K. Uteniyazov, A. Yu. Leyderman, R. A. Ayukhanov +25

    BoshqaAdvanced Semiconductor Detectors and MaterialsSemiconductor Physics Quantum Electronics & Optoelectronics20200 iqtibos
    ABI

  11. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    MaqolaIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering20210 iqtibos
    ABI