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Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

A.S. SaidovStarodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanA. Yu. LeydermanStarodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovStarodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanK. A. AmonovStarodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
Semiconductorsjournal2018en
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