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A.S. Saidov

101 ta ish

Laboratory “Growth of semiconductor materials”, Physical–Technical Institute of Uzbek Academy of Science, Mavlanov str. 2 B, Tashkent, 700084, Uzbekistan

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    A.S. Saidov, A. Sh. Razzakov, V.A. Risaeva +1

    MaqolaChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 iqtibos
    ABI

  2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  3. Thermovoltaic properties of technical silicon melted by solar radiation

    A.S. Saidov, A. A. Abakumov, М. С. Саидов +2

    MaqolaDiverse Industrial Engineering TechnologiesApplied Solar Energy200711 iqtibos
    ABI

  4. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 iqtibos
    ABI

  5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  6. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaPhase-change materials and chalcogenidesApplied Solar Energy20198 iqtibos
    ABI

  8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  11. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  12. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 iqtibos
    ABI

  13. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos
    ABI

  14. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    A.S. Saidov, С. З. Зайнабидинов, M. U. Kalanov +2

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 iqtibos
    ABI

  15. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    A.S. Saidov, A. Sh. Razzokov

    MaqolaSemiconductor materials and interfacesCrystallography Reports20225 iqtibos
    ABI

  16. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  17. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    A.S. Saidov, A. Yu. Leyderman, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsTechnical Physics Letters20164 iqtibos
    ABI

  18. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos
    ABI

  19. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos
    ABI

  20. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos
    ABI

  21. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    A.S. Saidov, K. A. Amonov, Ada Yul'evna Leyderman

    MaqolaSemiconductor materials and interfacesComputational nanotechnology20194 iqtibos
    ABI

  22. About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

    Ada Leyderman, A.S. Saidov, Muslim Khashaev +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsJournal of Materials Science Research20134 iqtibos
    ABI

  23. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, A.S. Saidov, M. M. Khashaev +1

    MaqolaPhase-change materials and chalcogenidesApplied Solar Energy20144 iqtibos
    ABI

  24. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, A.S. Saidov, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20164 iqtibos
    ABI

  25. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI