Study of properties of tellurium-doped indium phosphide as photoconversion material
A. Yu. LeĭdermanPhysical-Technical Institute, SPA Physics-Sun, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanA.S. SaidovPhysical-Technical Institute, SPA Physics-Sun, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanM. M. KhashaevPhysical-Technical Institute, SPA Physics-Sun, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanU. Kh. RakhmonovPhysical-Technical Institute, SPA Physics-Sun, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
The results of the studies of n-InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of T > 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of vacancies.
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