Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API

A.S. Saidov

101 ta ish

Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan

  1. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 iqtibos
    ABI

  2. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    A.S. Saidov, Sh. N. Usmonov, М. С. Саидов

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20153 iqtibos
    ABI

  3. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, A.S. Saidov

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20043 iqtibos
    ABI

  4. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  5. Structure and photoelectric properties of Si1 − x Sn x epilayers

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20103 iqtibos
    ABI

  6. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, A.S. Saidov, M. M. Hashaev +1

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 iqtibos
    ABI

  7. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  8. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

    М. С. Саидов, A.S. Saidov, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20092 iqtibos
    ABI

  9. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace

    A.S. Saidov, A. Yu. Leyderman, Sh. T. Manshurov

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20102 iqtibos
    ABI

  10. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20192 iqtibos
    ABI

  11. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    A.S. Saidov, D. V. Saparov, Shukrullo Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering20212 iqtibos
    ABI

  12. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1

    MaqolaSemiconductor materials and interfacesActa Physica Polonica A20222 iqtibos
    ABI

  13. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, A.S. Saidov, V. V. Gіrzhon +1

    MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 iqtibos
    ABI

  14. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 iqtibos
    ABI

  15. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 iqtibos
    ABI

  16. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    A.S. Saidov, A. Kutlimratov, Б. Сапаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20012 iqtibos
    ABI

  17. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    A.S. Saidov, A. Sh. Razzakov, D. V. Saparov

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20022 iqtibos
    ABI

  18. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    A.S. Saidov, É. A. Koshchanov, A. Sh. Razzakov

    MaqolaPhase-change materials and chalcogenidesTechnical Physics Letters19982 iqtibos
    ABI

  19. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20102 iqtibos
    ABI

  20. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 iqtibos
    ABI

  21. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

    A.S. Saidov, Alozhon Sh. Razzokov

    MaqolaSilicon Nanostructures and PhotoluminescenceSiberian Journal of Physics20202 iqtibos
    ABI

  22. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    A.S. Saidov, A. Sh. Razzakov, Kurban Gaimnazarov

    MaqolaChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20012 iqtibos
    ABI

  23. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    A.S. Saidov, Sh. N. Usmonov, U. Kh. Rakhmonov

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 iqtibos
    ABI

  24. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, A.S. Saidov, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20172 iqtibos
    ABI

  25. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    A.S. Saidov, A. Sh. Razzakov, É. A. Koshchanov

    MaqolaPhotonic and Optical DevicesTechnical Physics Letters20012 iqtibos
    ABI