Thermovoltaic processes in gallium arsenide doped with tin
A. Yu. LeĭdermanPhysicotechnical Institute of the Physics-Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanA.S. SaidovPhysicotechnical Institute of the Physics-Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanM. M. HashaevPhysicotechnical Institute of the Physics-Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanU. Kh. RakhmonovPhysicotechnical Institute of the Physics-Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Annotatsiya
In this study, we present the results of studies of n-GaAs〈Sn〉 with simple ohmic contacts in the temperature range of 30–200°C. It was found that, at temperature T > 30°C, this structure generates current (up to 0.018 μA) and voltage (up to 1.2 mV) and also has rectifying properties.
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