Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions
A.S. SaidovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKhomidkhodzha KholikovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
Epitaxial layers of p-type continuous solid solutions of the (Si2)1−x−y (Ge2) x (GaAs) y system (0 ≤ x ≤ 0.9, 0 ≤ y ≤ 0.92) have been grown by liquid phase epitaxy from a lead-based solution melt confined between two horizontal n-type single crystal silicon substrates. Depth-composition profiles of the solid solution layers have been obtained. The photosensitivity spectra of nSi-p(Si2)1−x−y (Ge2) x (GaAs) y structures have been measured.
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