A.S. Saidov
101 ta ish
Institute of Nuclear Physics, U.Gulomov Street, Pos Ulugbek, Tashkent 100214 (Uzbekistan)
Influence of the varizonal Si<sub>1-x</sub>Ge<sub>x</sub> solid solution composition on the thermovoltaic effect in n – Si – p – Si<sub>(1-x)</sub>Ge<sub>x</sub> structure
A.S. Saidov, Sh. N. Usmonov, A B Karshiev +1
MaqolaSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20220 iqtibosABIStructural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt
A.S. Saidov, M. U. Kalanov, D. V. Saparov +4
MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibosABISTUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD
A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov
MaqolaAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 iqtibosABI