Electrical and physical properties of structures with p-n transition produced from silicon obtained by fivefold meltdown of metallurgical silicon in a solar oven
A.S. SaidovPhysics of the Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanA. Yu. LeĭdermanPhysics of the Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanSh. T. ManshurovPhysics of the Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanA. N. KurmantaevKazakh-Turkish University, Turkestan, KazakhstanSaltanat Abdukhairovna BakhtibaevaKazakh-Turkish University, Turkestan, Kazakhstan
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The results of studying electrical and physical properties of n-p structures produced from silicon obtained by fivefold open-air meltdown of metallurgical silicon of KR3 silicon in a solar oven are presented. It is shown that the current and voltage generated during the heating of structures with plain ohmic contacts start to fall at around 120°C, while in structures with n-p transition these characteristics continue to increase at up to 250°C. It has been discovered that structures with n-p transition display rectifying properties in a temperature range of 30–150°C.
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