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A. Sh. Razzokov

13 ta ish

Urgench State University, Urgench, Uzbekistan

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    A.S. Saidov, A. Sh. Razzokov

    MaqolaSemiconductor materials and interfacesCrystallography Reports20225 iqtibos
    ABI

  2. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1

    MaqolaSemiconductor materials and interfacesActa Physica Polonica A20222 iqtibos
    ABI

  3. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, A.S. Saidov, V. V. Gіrzhon +1

    MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 iqtibos
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 iqtibos
    ABI

  5. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

    A. Sh. Razzokov, Khushnudbek Eshchanov

    MaqolaPhotonic and Optical DevicesInternational Journal of Thermodynamics20221 iqtibos
    ABI

  6. THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT

    Khushnudbek Eshchanov, A. Sh. Razzokov

    MaqolaSolidification and crystal growth phenomena20210 iqtibos
    ABI

  7. Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

    A. Sh. Razzokov, Khushnudbek Eshchanov

    MaqolaHermeneutics and Narrative IdentityDergiPark (Istanbul University)20210 iqtibos
    ABI

  8. Growth of Epitaxial Layers of the Si&lt;sub&gt;1-x-y&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;Sn&lt;sub&gt;y&lt;/sub&gt; Solid Solution from a Tin Solution-Melt

    A. Sh. Razzokov

    MaqolaPhotonic and Optical DevicesSiberian Journal of Physics20230 iqtibos
    ABI

  9. Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

    A. Sh. Razzokov, Khushnudbek Eshchanov

    MaqolaSilicon and Solar Cell TechnologiesProceedings of Pakistan Academy of Sciences A Physical and Computational Sciences20240 iqtibos
    ABI

  10. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

    A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov

    MaqolaAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 iqtibos
    ABI

  11. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

    MaqolaGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos
    ABI

  12. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

    MaqolaSilicon Nanostructures and PhotoluminescenceVacuum20250 iqtibos
    ABI

  13. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    BobSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 iqtibos
    ABI