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С.И. Петрушенко

2 ta ish

V.N. Karazin Kharkiv National University, Svobody square 4, 61077, Kharkiv, Ukraine

  1. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1

    MaqolaSemiconductor materials and interfacesActa Physica Polonica A20222 iqtibos
    ABI

  2. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 iqtibos
    ABI