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M. U. Hajiev

8 ta ish

Physical-Technical Institute Physics of the Sun, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

  1. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    MaqolaTransition Metal Oxide NanomaterialsApplied Solar Energy20164 iqtibos
    ABI

  2. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    MaqolaSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 iqtibos
    ABI

  3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 iqtibos
    ABI

  4. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, A. Kutlimratov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Science20241 iqtibos
    ABI

  5. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    MaqolaSemiconductor materials and devicesSemiconductors20100 iqtibos
    ABI

  6. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    MaqolaSemiconductor materials and interfacesSemiconductors20100 iqtibos
    ABI

  7. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    A.S. Saidov, Sh.N. Usmonov, M. U. Hajiev +9

    MaqolaZnO doping and propertiesEast European Journal of Physics20250 iqtibos
    ABI

  8. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    MaqolaSemiconductor materials and interfacesResults in Physics20260 iqtibos
    ABI