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Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

I. G. AtabaevStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanN. A. MatchanovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanM. U. HajievStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanV. A. PakStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanTimur SalievStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan

Semiconductorsjournal2010en

ABI

Annotatsiya

The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D ss). It is shown that the barrier height in the structures under study correlates with the D ss value and germanium content in the Si1 − x Ge x alloy.

Mavzular

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/s1063782610050106

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