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Oʻzbek

I. G. Atabaev

25 ta ish

Institute of Materials Science, NPO Physics-Sun, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

  1. High-strength glass-ceramic materials synthesized in a large solar furnace

    I. G. Atabaev, Sh. A. Faiziev, M. S. Paizullakhanov +2

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20156 iqtibos
    ABI

  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
    ABI

  3. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  4. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI

  5. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 iqtibos
    ABI

  6. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    MaqolaTransition Metal Oxide NanomaterialsApplied Solar Energy20164 iqtibos
    ABI

  7. The effects of the solar radiant flux density on the properties of pyroceramic materials

    T. T. Riskiev, M. S. Paizullakhanov, I. G. Atabaev +2

    MaqolaEnvironmental and Sediment ControlApplied Solar Energy20144 iqtibos
    ABI

  8. Modernization of an automated controlling system for heliostat field of big solar furnace

    I. G. Atabaev, J. S. Akhatov, Э. Д. Мухамедиев +1

    MaqolaPhotovoltaic System Optimization TechniquesApplied Solar Energy20164 iqtibos
    ABI

  9. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

    I. G. Atabaev

    MaqolaSemiconductor materials and interfacesComputational Materials Science20013 iqtibos
    ABI

  10. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos
    ABI

  11. Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD

    I. G. Atabaev, M. U. Khazhiev, S. B. Zakirova +1

    MaqolaZnO doping and propertiesApplied Solar Energy20172 iqtibos
    ABI

  12. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    MaqolaSemiconductor materials and interfacesInorganic Materials20051 iqtibos
    ABI

  13. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    MaqolaSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 iqtibos
    ABI

  14. Growth and properties of single crystals of Si1 − x Ge x (0 &lt; x &lt; 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 iqtibos
    ABI

  15. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 iqtibos
    ABI

  16. Low-temperature diffusion of lithium in silicon-germanium solid solutions

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

    MaqolaSemiconductor materials and interfacesPhysics of the Solid State20011 iqtibos
    ABI

  17. Structure Formation in the System TiO2–BaCO3 in Concentrated Solar Radiation

    I. G. Atabaev, Sh. A. Faiziev, M. S. Paizullakhanov

    MaqolaPigment Synthesis and PropertiesGlass and Ceramics20161 iqtibos
    ABI

  18. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    MaqolaSilicon Carbide Semiconductor TechnologiesSemiconductors20010 iqtibos
    ABI

  19. On the possibility of determining the diffusion length of excitons in semiconductors from photomagnetic measurement data

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    MaqolaSilicon and Solar Cell TechnologiesPhysics of the Solid State20050 iqtibos
    ABI

  20. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 iqtibos
    ABI

  21. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    MaqolaSemiconductor materials and interfacesInorganic Materials20080 iqtibos
    ABI

  22. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

    I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

    MaqolaSilicon Effects in AgricultureComputational Materials Science20080 iqtibos
    ABI

  23. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    MaqolaSemiconductor materials and devicesSemiconductors20100 iqtibos
    ABI

  24. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    MaqolaSemiconductor materials and interfacesSemiconductors20100 iqtibos
    ABI

  25. Change in characteristics of the band structure of oxide materials at high temperatures

    I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov

    MaqolaSemiconductor materials and devicesHigh Temperature20160 iqtibos
    ABI