Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties
I. G. AtabaevStarodubtsev Physicotechnical institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanM. U. HajievStarodubtsev Physicotechnical institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanN. A. MatchanovStarodubtsev Physicotechnical institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanTimur SalievStarodubtsev Physicotechnical institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, UzbekistanK. A. BobojonovStarodubtsev Physicotechnical institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, Uzbekistan
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The effect of various chemical treatments of the alloy surface on the properties of Ti-p-SiGe and Ni-p-SiGe contacts fabricated by vacuum thermal deposition at a substrate temperature of 350–400°C has been studied. Etching under various conditions is used to form an initial surface with various surface-state densities. It is shown that an intermediate nickel germanosilicide layer is formed in nickel-based structures during thermal deposition of contacts, which has a significant effect on the current-voltage and capacitance-voltage characteristics of structures.
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