Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface
I. G. AtabaevPhysical Technical Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanTimur SalievPhysical Technical Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanБ.Г. АтабаевInstitute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanR. JabbarganovInstitute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Annotatsiya
Mass-spectra of the surface of SiC crystals doped with boron by low-temperature diffusion in the presence of carbon vacancies are investigated. Elements in the near-surface area of the crystals are determined. It is shown that B2 dimers and B3 trimers of boron form in the diffusion zone. The obtained data confirm the possibility of doping SiC crystals with boron at low temperatures (T g = 1150–1250°C).
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