Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

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2. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

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3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

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   ABIABI:AkademIndex/openalex/2018.article.000197

4. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

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