Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion
Kh. N. ZhuraevPhysicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of UzbekistanА. YusupovPhysicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of UzbekistanA. G. GulyamovPhysicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of UzbekistanM. U. KhazhievPhysicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of UzbekistanDilmurod SaidovPhysicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of UzbekistanN. B. AdilovPhysicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, 2B Chingiz Aitmatov Str., Tashkent, 100084, Republic of Uzbekistan
ABI
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