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Oʻzbek

A. G. Gulyamov

22 ta ish

Physical-Technical Institute, Uzbek Academy of Sciences, Chingiz Aytmatov Street, 2 “B”, Tashkent 100084, Uzbekistan

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 iqtibos
    ABI

  2. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    MaqolaOptical Polarization and EllipsometrySemiconductors201510 iqtibos
    ABI

  3. Influence of temperature on the oscillations of longitudinal magnetoresistance in semiconductors with a nonparabolic dispersion law

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    MaqolaQuantum and electron transport phenomenaIndian Journal of Physics20189 iqtibos
    ABI

  4. On the Heat Capacity of a Quasi-Two-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov

    MaqolaQuantum and electron transport phenomenaAdvances in Condensed Matter Physics20198 iqtibos
    ABI

  5. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    MaqolaMechanical and Optical ResonatorsSemiconductors20197 iqtibos
    ABI

  6. Features of the chemical potential of a quasi-two-dimensional electron gas at low-temperatures

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov +2

    MaqolaQuantum and electron transport phenomenaInternational Journal of Modern Physics B20216 iqtibos
    ABI

  7. Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20176 iqtibos
    ABI

  8. TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD

    M. Ahmetoğlu, Gönül Kaynak, S. H. Shamirzaev +5

    MaqolaSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B20095 iqtibos
    ABI

  9. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20095 iqtibos
    ABI

  10. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaElectromagnetic Effects on MaterialsSemiconductors20115 iqtibos
    ABI

  11. Broadening Thermal Energy Levels and Density States Quasi One-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, A. B. Davlatov +1

    MaqolaQuantum and electron transport phenomenaJournal of Applied Mathematics and Physics20163 iqtibos
    ABI

  12. Formation of intermediate coupling optical polarons and bipolarons in two-dimensional systems

    S. Dzhumanov, P.J. Baimatov, Sh. T. Inoyatov +2

    MaqolaPhysics of Superconductivity and MagnetismPhysics Letters A20192 iqtibos
    ABI

  13. Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    MaqolaSolid-state spectroscopy and crystallographyAdvances in Condensed Matter Physics20192 iqtibos
    ABI

  14. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaSurface and Thin Film PhenomenaSemiconductors20092 iqtibos
    ABI

  15. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20182 iqtibos
    ABI

  16. System of Potential Barriers in Nanostructures

    A. G. Gulyamov

    MaqolaGraphene research and applicationsWorld Journal of Condensed Matter Physics20152 iqtibos
    ABI

  17. The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

    G. Gulyamov, A. G. Gulyamov, A. Q. Ergashev +1

    MaqolaSilicon and Solar Cell TechnologiesJournal of Modern Physics20151 iqtibos
    ABI

  18. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 iqtibos
    ABI

  19. Investigation of influence of high temperature and low magnetic fields on oscillations of the magnetic susceptibility in semiconductors

    G. Gulyamov, A. G. Gulyamov, Ulugbek Inayatillayevich Erkaboev

    MaqolaElectric Power Systems and ControlUzbekiston Fizika Zhurnali20150 iqtibos
    ABI

  20. Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

    G. Gulyamov, A. G. Gulyamov, Feruza R. Muhitdinova

    Maqolananoparticles nucleation surface interactionsJournal of Modern Physics20160 iqtibos
    ABI

  21. MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    MaqolaSemiconductor Quantum Structures and DevicesAlternative Energy and Ecology (ISJAEE)20190 iqtibos
    ABI

  22. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov +2

    MaqolaZnO doping and propertiesApplied Solar Energy20210 iqtibos
    ABI