TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD
M. AhmetoğluDepartment of Physics, Uludag University, 16059, Görukle, Bursa, TurkeyGönül KaynakDepartment of Physics, Uludag University, 16059, Görukle, Bursa, TurkeyS. H. ShamirzaevNamangan Engineering-pedagogical institute,716003 Namangan, UzbekistanG. GulyamovNamangan Engineering-pedagogical institute,716003 Namangan, UzbekistanA. G. GulyamovNamangan Engineering-pedagogical institute,716003 Namangan, UzbekistanMukhammadjon G. DadamirzaevNamangan Engineering-pedagogical institute,716003 Namangan, UzbekistanS. R. BoydedayevNamangan Engineering-pedagogical institute,716003 Namangan, UzbekistanN. APRAILOVNamangan Engineering-pedagogical institute,716003 Namangan, Uzbekistan
ABI
Annotatsiya
Radio-frequency (HF) quasi-potential Φ in the field of the space charge region of contact of a metal–semiconductor is explored. At the frequency, ω, greater frequency plasma fluctuations ω 0 HF quasi-potential is positive, but at frequencies ω < ω 0 quasi-potential Ph is negative. VAC and Schottky barrier with provision for HF quasi-potential are calculated. It is shown that HF gives an essential contribution on EMF hot carriers when frequency of wave is less in electronic gas fluctuations in layer potential barrier.
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