Maqola

EMF Induced in a p–n Junction under a Strong Microwave Field and Light

G. GulyamovNamangan Engineering-Construction Institute, 160103, Namangan, UzbekistanУ. И. ЭркабоевNamangan Engineering-Technological Institute, 160115, Namangan, UzbekistanN. Yu. SharibaevNamangan Engineering-Technological Institute, 160115, Namangan, UzbekistanA. G. GulyamovPhysical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, Uzbekistan

Semiconductorsjournal2019en

ABI

Annotatsiya

The effect of a strong electromagnetic field on currents and electromotive forces in a p–n junction is considered. It is shown that a p–n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a p–n junction placed into a strong microwave (UHF) electromagnetic field.

Mavzular

Mechanical and Optical Resonators Quantum and electron transport phenomena Organic and Molecular Conductors Research

Identifikatorlar

DOI: 10.1134/s1063782619030060

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