The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field
S. H. ShamirzaevPhysicotechnical Institute, Academy of Sciences of Republic of Uzbekistan, Tashkent, 700084, UzbekistanG. GulyamovNamangan Engineering-Pedagogical Institute, Namangan, 716003, UzbekistanMukhammadjon G. DadamirzaevPhysicotechnical Institute, Academy of Sciences of Republic of Uzbekistan, Tashkent, 700084, UzbekistanA. G. GulyamovNamangan Engineering-Pedagogical Institute, Namangan, 716003, Uzbekistan
ABI
Annotatsiya
The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.
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