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A. G. Gulyamov

Работ: 22

Physical-Technical Institute, Uzbek Academy of Sciences, Chingiz Aytmatov Street, 2 “B”, Tashkent 100084, Uzbekistan

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2020Цитирований: 11
    ABI

  2. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    СтатьяOptical Polarization and EllipsometrySemiconductors2015Цитирований: 10
    ABI

  3. Influence of temperature on the oscillations of longitudinal magnetoresistance in semiconductors with a nonparabolic dispersion law

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    СтатьяQuantum and electron transport phenomenaIndian Journal of Physics2018Цитирований: 9
    ABI

  4. On the Heat Capacity of a Quasi-Two-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov

    СтатьяQuantum and electron transport phenomenaAdvances in Condensed Matter Physics2019Цитирований: 8
    ABI

  5. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    СтатьяMechanical and Optical ResonatorsSemiconductors2019Цитирований: 7
    ABI

  6. Features of the chemical potential of a quasi-two-dimensional electron gas at low-temperatures

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov +2

    СтатьяQuantum and electron transport phenomenaInternational Journal of Modern Physics B2021Цитирований: 6
    ABI

  7. Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2017Цитирований: 6
    ABI

  8. TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD

    M. Ahmetoğlu, Gönül Kaynak, S. H. Shamirzaev +5

    СтатьяSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B2009Цитирований: 5
    ABI

  9. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2009Цитирований: 5
    ABI

  10. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяElectromagnetic Effects on MaterialsSemiconductors2011Цитирований: 5
    ABI

  11. Broadening Thermal Energy Levels and Density States Quasi One-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, A. B. Davlatov +1

    СтатьяQuantum and electron transport phenomenaJournal of Applied Mathematics and Physics2016Цитирований: 3
    ABI

  12. Formation of intermediate coupling optical polarons and bipolarons in two-dimensional systems

    S. Dzhumanov, P.J. Baimatov, Sh. T. Inoyatov +2

    СтатьяPhysics of Superconductivity and MagnetismPhysics Letters A2019Цитирований: 2
    ABI

  13. Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    СтатьяSolid-state spectroscopy and crystallographyAdvances in Condensed Matter Physics2019Цитирований: 2
    ABI

  14. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяSurface and Thin Film PhenomenaSemiconductors2009Цитирований: 2
    ABI

  15. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2018Цитирований: 2
    ABI

  16. System of Potential Barriers in Nanostructures

    A. G. Gulyamov

    СтатьяGraphene research and applicationsWorld Journal of Condensed Matter Physics2015Цитирований: 2
    ABI

  17. The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

    G. Gulyamov, A. G. Gulyamov, A. Q. Ergashev +1

    СтатьяSilicon and Solar Cell TechnologiesJournal of Modern Physics2015Цитирований: 1
    ABI

  18. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics2020Цитирований: 1
    ABI

  19. Investigation of influence of high temperature and low magnetic fields on oscillations of the magnetic susceptibility in semiconductors

    G. Gulyamov, A. G. Gulyamov, Ulugbek Inayatillayevich Erkaboev

    СтатьяElectric Power Systems and ControlUzbekiston Fizika Zhurnali2015Цитирований: 0
    ABI

  20. Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

    G. Gulyamov, A. G. Gulyamov, Feruza R. Muhitdinova

    Статьяnanoparticles nucleation surface interactionsJournal of Modern Physics2016Цитирований: 0
    ABI

  21. MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    СтатьяSemiconductor Quantum Structures and DevicesAlternative Energy and Ecology (ISJAEE)2019Цитирований: 0
    ABI

  22. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov +2

    СтатьяZnO doping and propertiesApplied Solar Energy2021Цитирований: 0
    ABI