Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods
Аннотация
Technology has been developed for generating a vapor phase in a separate evaporator at a temperature of 80–120°C by dropping a mixture in a quasi-closed reactor with the help of chemical vapor deposition (CVD). Tin oxide (SnO2) layers were grown on the surface of single-crystal p-Si by chemical vaporization epitaxy and formed a microcrystalline structure on the substrate surface at a temperature of 170–500°C. The study of the spectral dependence of the photosensitivity of the n-SnO2/p-Si heterostructure with an aluminum back contact showed that the inversion of photocurrent photosensitivity occurred associated with the formation of an inbuilt electric field that was generated at the boundary of the frontal electric contact between Al and p-Si and counter connected to the main potential barrier of the n-SnO2/p-Si heterojunction.