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Kh. N. Juraev

Работ: 27

Physical-Technical Institute, Uzbek Academy of Sciences, Chingiz Aytmatov Street, 2 “B”, Tashkent 100084, Uzbekistan

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2020Цитирований: 11
    ABI

  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  3. Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field

    B. T. Abdulazizov, G. Gulyamov, P. J. Baymatov +3

    СтатьяQuantum and electron transport phenomenaSPIN2022Цитирований: 8
    ABI

  4. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    СтатьяOptical properties and cooling technologies in crystalline materialsLow Temperature Physics2022Цитирований: 7
    ABI

  5. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5
    ABI

  6. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2011Цитирований: 4
    ABI

  7. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4
    ABI

  8. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    СтатьяTransition Metal Oxide NanomaterialsApplied Solar Energy2016Цитирований: 4
    ABI

  9. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2
    ABI

  10. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy2018Цитирований: 1
    ABI

  11. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Science2024Цитирований: 1
    ABI

  12. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    СтатьяQuantum and electron transport phenomenaJournal of Computational Electronics2024Цитирований: 1
    ABI

  13. Effects of Band Nonparabolicity on the Resonance Peaks of the Single-Particle Entropy of a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, Mahmudjon Tohirjonov +3

    СтатьяQuantum and electron transport phenomenaInternational Journal of Theoretical Physics2024Цитирований: 1
    ABI

  14. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

    Б.Г. Атабаев, V. I. Chepurnov, N.Yu. Arutyunov +3

    СтатьяAdvanced Energy Technologies and Civil Engineering Innovationsphysica status solidi (RRL) - Rapid Research Letters2025Цитирований: 1
    ABI

  15. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    СтатьяQuantum and electron transport phenomenaActa Physica Polonica A2025Цитирований: 1
    ABI

  16. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    СтатьяIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering2021Цитирований: 0
    ABI

  17. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov +2

    СтатьяZnO doping and propertiesApplied Solar Energy2021Цитирований: 0
    ABI

  18. Formation and Properties of ITO Films Produced on Silicon for Applications in Solar Cells

    А. С. Саидов, А. Кутлимратов, R. R. Kabulov +3

    СтатьяZnO doping and properties2023Цитирований: 0
    ABI

  19. Theoretical study of the threshing process of corn cob under the influence of the rasp bars

    G G Fozilov, A Akhmedov, Sh. U. Yuldashev +2

    СтатьяAgricultural Engineering and MechanizationIOP Conference Series Earth and Environmental Science2024Цитирований: 0
    ABI

  20. ITO Films Deposited on Silicon by CVD Method

    R. R. Kabulov, А. Кутлимратов, А. С. Саидов +2

    СтатьяZnO doping and propertiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI

  21. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy2025Цитирований: 0
    ABI

  22. Internal Energy and Heat Capacity of a Two-Dimensional Electron Gas in a Half-Filled Landau Subband

    B. T. Abdulazizov, P. J. Baymatov, O. M. Yunusov +2

    СтатьяQuantum and electron transport phenomenaInternational Journal of Theoretical Physics2025Цитирований: 0
    ABI

  23. Local overheating of a photovoltaic module junction box: analysis and recommendations

    Farkhodjon Turaev, I. A. Yuldoshev, Kh. N. Juraev +3

    СтатьяSilicon and Solar Cell TechnologiesClean Energy2025Цитирований: 0
    ABI

  24. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    А. С. Саидов, Sh.N. Usmonov, M. U. Hajiev +9

    СтатьяZnO doping and propertiesEast European Journal of Physics2025Цитирований: 0
    ABI

  25. Development and investigation of the electrophysical and spectrometric characteristics of a <i>p</i> -Si/ <i>n</i> -InP heterostructure radiation detector

    А. С. Саидов, S. A. Radzhapov, Shukrullo Usmonov +3

    СтатьяRadiation Effects in ElectronicsOxford Open Materials Science2026Цитирований: 0
    ABI