Iikham G. Atabaev

Работ: 1

Physical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;

1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.390741