É. N. Bakhranov

Работ: 6

Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent, Uzbekistan

1. Oxide film assisted dopant diffusion in silicon carbide

   Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

   СтатьяSilicon and Solar Cell TechnologiesThin Solid Films2010Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.390738

2. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.390741

3. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000180

4. Low-temperature diffusion of lithium in silicon-germanium solid solutions

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

   СтатьяSemiconductor materials and interfacesPhysics of the Solid State2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.251132

5. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000319

6. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000333