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I. G. Atabaev

Работ: 25

Institute of Materials Science, NPO Physics-Sun, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

  1. High-strength glass-ceramic materials synthesized in a large solar furnace

    I. G. Atabaev, Sh. A. Faiziev, M. S. Paizullakhanov +2

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2015Цитирований: 6
    ABI

  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    СтатьяSilicon and Solar Cell TechnologiesThin Solid Films2010Цитирований: 5
    ABI

  3. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2011Цитирований: 4
    ABI

  4. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 4
    ABI

  5. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4
    ABI

  6. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    СтатьяTransition Metal Oxide NanomaterialsApplied Solar Energy2016Цитирований: 4
    ABI

  7. The effects of the solar radiant flux density on the properties of pyroceramic materials

    T. T. Riskiev, M. S. Paizullakhanov, I. G. Atabaev +2

    СтатьяEnvironmental and Sediment ControlApplied Solar Energy2014Цитирований: 4
    ABI

  8. Modernization of an automated controlling system for heliostat field of big solar furnace

    I. G. Atabaev, J. S. Akhatov, Э. Д. Мухамедиев +1

    СтатьяPhotovoltaic System Optimization TechniquesApplied Solar Energy2016Цитирований: 4
    ABI

  9. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

    I. G. Atabaev

    СтатьяSemiconductor materials and interfacesComputational Materials Science2001Цитирований: 3
    ABI

  10. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2
    ABI

  11. Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD

    I. G. Atabaev, M. U. Khazhiev, S. B. Zakirova +1

    СтатьяZnO doping and propertiesApplied Solar Energy2017Цитирований: 2
    ABI

  12. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    СтатьяSemiconductor materials and interfacesInorganic Materials2005Цитирований: 1
    ABI

  13. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2007Цитирований: 1
    ABI

  14. Growth and properties of single crystals of Si1 − x Ge x (0 &lt; x &lt; 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2010Цитирований: 1
    ABI

  15. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy2018Цитирований: 1
    ABI

  16. Low-temperature diffusion of lithium in silicon-germanium solid solutions

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2001Цитирований: 1
    ABI

  17. Structure Formation in the System TiO2–BaCO3 in Concentrated Solar Radiation

    I. G. Atabaev, Sh. A. Faiziev, M. S. Paizullakhanov

    СтатьяPigment Synthesis and PropertiesGlass and Ceramics2016Цитирований: 1
    ABI

  18. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    СтатьяSilicon Carbide Semiconductor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  19. On the possibility of determining the diffusion length of excitons in semiconductors from photomagnetic measurement data

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2005Цитирований: 0
    ABI

  20. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2008Цитирований: 0
    ABI

  21. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    СтатьяSemiconductor materials and interfacesInorganic Materials2008Цитирований: 0
    ABI

  22. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

    I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

    СтатьяSilicon Effects in AgricultureComputational Materials Science2008Цитирований: 0
    ABI

  23. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0
    ABI

  24. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0
    ABI

  25. Change in characteristics of the band structure of oxide materials at high temperatures

    I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov

    СтатьяSemiconductor materials and devicesHigh Temperature2016Цитирований: 0
    ABI