Статья

Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

I. G. AtabaevPhysicotechnical InstituteN. A. MatchanovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlanova 2b, Tashkent, 700084, UzbekistanÉ. N. BakhranovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlanova 2b, Tashkent, 700084, UzbekistanМ. С. СаидовFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlanova 2b, Tashkent, 700084, Uzbekistan

Inorganic Materialsjournal2005en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Thin-Film Transistor Technologies

Идентификаторы

DOI: 10.1007/s10789-005-0256-0

Цитирования и источники

Цитирований: 1 Использованных источников: 17

Показатели — AkademScholar · Скоро