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M. U. Hajiev

Работ: 8

Physical-Technical Institute Physics of the Sun, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

  1. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    СтатьяTransition Metal Oxide NanomaterialsApplied Solar Energy2016Цитирований: 4
    ABI

  2. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2007Цитирований: 1
    ABI

  3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy2018Цитирований: 1
    ABI

  4. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Science2024Цитирований: 1
    ABI

  5. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0
    ABI

  6. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0
    ABI

  7. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    А. С. Саидов, Sh.N. Usmonov, M. U. Hajiev +9

    СтатьяZnO doping and propertiesEast European Journal of Physics2025Цитирований: 0
    ABI

  8. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0
    ABI