V. A. Pak

Работ: 4

Physical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;

1. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2011Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.390730

2. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.390748

3. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

   I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

   СтатьяTransition Metal Oxide NanomaterialsApplied Solar Energy2016Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.399255

4. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000173