Tojiddin M. Saliev

Работ: 3

Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent, Uzbekistan

1. Oxide film assisted dopant diffusion in silicon carbide

   Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

   СтатьяSilicon and Solar Cell TechnologiesThin Solid Films2010Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.390738

2. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.390741

3. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2011Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.390730