Статья

Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

I. G. AtabaevPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanN. A. MatchanovPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanА. YusupovPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanDilmurod SaidovPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanМ. С. СаидовPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, Uzbekistan

Computational Materials Sciencejournal2008en

ABI

Аннотация

Аннотация отсутствует.

Темы

Silicon Effects in Agriculture Silicon and Solar Cell Technologies

Идентификаторы

DOI: 10.1016/j.commatsci.2008.06.008

Цитирования и источники

Цитирований: 0Использованных источников: 7

Показатели — AkademScholar · Скоро