Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions
I. G. AtabaevPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanN. A. MatchanovPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanА. YusupovPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanDilmurod SaidovPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, UzbekistanМ. С. СаидовPhysical – Technical Institute of Uzbek Academy of Sciences, Mavlanov Street 2B, Tashkent 700084, Uzbekistan
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